منابع مشابه
Extended defects formation in nanosecond laser-annealed ion implanted silicon.
Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron...
متن کاملAnnealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si ions to a dose of 2310 cm and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 cent...
متن کاملStudy of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals
An analysis of extended defects generated during annealing by pulsed excimer laser radiation in silicon crystals implanted with Ge ions is presented. The investigation was performed by means of two complementary methods: the interference-polarizing microscopy and the Lang X-ray transmission topography. The existence of extended defects was revealed. It has been stated that the distribution of t...
متن کاملDIFFUSION OF SILICON IN ION IMPLANTED GaAs
Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
متن کاملEffect of Laser Annealing on Optical Properties of Ion-Implanted ZnO Nanorods
We report on the demonstration of the effectiveness of nanosecond laser annealing on optical properties of phosphorus ion (P)-implanted ZnO nanorods (NRs). Vertically-alligned ZnO NRs have been synthesized by nanoparticle-assisted pulsed laser deposition (NAPLD) on c-plane sapphire substrates. The pre-laser annealing was performed with the third harmonic (355 nm) of a Qwitched Nd:YAG laser at a...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1981
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.1981.4331515